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| AO4815 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4815 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4815 is Pb-free (meets ROHS & Sony 259 specifications). AO4815L is a Green Product ordering option. AO4815 and AO4815L are electrically identical. Features VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18m (VGS = -20V) RDS(ON) < 20m (VGS = -10V) ESD Rating: 2KV HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 25 -8 -6.9 -40 2 1.44 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 50 73 31 Max 62.5 110 40 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4815 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A VDS=-5V, ID=-8A Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-8A TJ=125C -1 -40 14.1 19 16.2 37 15 -1 -2.6 2330 480 320 6.8 41 10 12 13 12 51 30.5 28 20.5 2900 18 24 20 -2.8 Min -30 -1 -5 1 -3 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns 35 ns nC gFS VSD IS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 10 52 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, ID=-8A VGS=-10V, VDS=-15V, RL=1.8, RGEN=3 IF=-8A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 2: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4815 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -6V -5V 20 25 VDS=-5V 20 -ID (A) -ID(A) -4.5V 15 125C 10 10 VGS=-4V 5 25C 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 2 2.5 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 3 5 18 Normalized On-Resistance 1.6 17 RDS(ON) (m) VGS=-10V 1.4 VGS=-10V ID=-8A 16 1.2 VGS=-20V ID=-8A 15 VGS=-20V 1 14 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=-8A 50 RDS(ON) (m) 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 -IS (A) 125C 40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-02 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-03 125C 30 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04 20 10 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4815 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=-15V ID=-8A Capacitance (pF) 2500 2000 1500 Coss 1000 500 0 0 5 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 45 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss 8 -VGS (Volts) 6 4 2 0 100.0 RDS(ON) limited 40 100s 1ms 10ms 0.1s Power (W) 10s 30 TJ(Max)=150C TA=25C 10.0 -ID (Amps) 20 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1s 10s DC 1 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 T Alpha & Omega Semiconductor, Ltd. |
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